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NTD4804N, NVD4804N
TYPICAL PERFORMANCE CURVES
240
200
10 V
6V
T J = 25 ° C
4.5 V
240
200
V DS ≥ 10 V
160
160
120
4V
120
80
3.6 V
80
T J = 125 ° C
40
0
0
1
2
3
4
3.2 V
5
40
0
0
1
T J = 25 ° C
2
3
T J = ? 55 ° C
4
5
6
7
0.010
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
0.01
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.009
0.008
0.007
I D = 30 A
T J = 25 ° C
0.0075
T J = 25 ° C
V GS = 4.5 V
0.006
0.005
0.004
0.005
0.0025
V GS = 11.5 V
0.003
2
4
6
8
10
0
10
20
30
40
50
60
70
80
90 100
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
1.5
I D = 30 A
V GS = 10 V
100,000
V GS = 0 V
T J = 175 ° C
1.4
1.3
1.2
10,000
1.1
1.0
0.9
0.8
1000
T J = 125 ° C
0.7
? 50 ? 25
0
25
50
75
100
125
150
175
100
0
5
10
15
20
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Drain Voltage
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功能描述:MOSFET NFET 30V 117A 4MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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